TK6Q60W,S1VQ

Part NumberTK6Q60W,S1VQ

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 600V 6.2A IPAK

DatasheetTK6Q60W

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 6.2A (Ta) 60W (Tc) Through Hole I-PAK

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TK6Q60W,S1VQ - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK6Q60W

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

820mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

3.7V @ 310µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak

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