TK60D08J1(Q)

Part NumberTK60D08J1(Q)

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 75V 60A TO220W

DatasheetTK60D08J1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 75V 60A (Ta) 140W (Tc) Through Hole TO-220(W)

To learn about the specification of TK60D08J1(Q), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TK60D08J1(Q) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TK60D08J1(Q).
We are offering TK60D08J1(Q) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TK60D08J1(Q) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK60D08J1

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5450pF @ 10V

FET Feature

Power Dissipation (Max)

140W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220(W)

Package / Case

TO-220-3

All categories