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TK58E06N1,S1X

TK58E06N1,S1X

Part NumberTK58E06N1,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 60V 58A TO-220

DatasheetTK58E06N1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220

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TK58E06N1,S1X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK58E06N1
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	58A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3400pF @ 30V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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