TK56E12N1,S1X

Part NumberTK56E12N1,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 120V 56A TO-220

DatasheetTK56E12N1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 56A (Ta) 168W (Tc) Through Hole TO-220

To learn about the specification of TK56E12N1,S1X, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TK56E12N1,S1X with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TK56E12N1,S1X.
We are offering TK56E12N1,S1X for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TK56E12N1,S1X - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK56E12N1

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

56A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 60V

FET Feature

Power Dissipation (Max)

168W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

All categories