TK55D10J1(Q)

Part NumberTK55D10J1(Q)

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 100V 55A TO220W

DatasheetTK55D10J1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 55A (Ta) 140W (Tc) Through Hole TO-220(W)

To learn about the specification of TK55D10J1(Q), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TK55D10J1(Q) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TK55D10J1(Q).
We are offering TK55D10J1(Q) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TK55D10J1(Q) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK55D10J1

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

55A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 27A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5700pF @ 10V

FET Feature

Power Dissipation (Max)

140W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220(W)

Package / Case

TO-220-3

All categories