TK46E08N1,S1X

Part NumberTK46E08N1,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 80V 80A TO-220

DatasheetTK46E08N1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 80A (Tc) 103W (Tc) Through Hole TO-220

To learn about the specification of TK46E08N1,S1X, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TK46E08N1,S1X with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TK46E08N1,S1X.
We are offering TK46E08N1,S1X for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TK46E08N1,S1X - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK46E08N1

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 40V

FET Feature

Power Dissipation (Max)

103W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

All categories