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TK35N65W,S1F

TK35N65W,S1F

Part NumberTK35N65W,S1F

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 650V 35A TO-247

DatasheetTK35N65W

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247

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TK35N65W,S1F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK35N65W
Standard Package	30
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	80mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 300V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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