TK35E08N1,S1X

Part NumberTK35E08N1,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 80V 55A TO-220

DatasheetTK35E08N1

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 55A (Tc) 72W (Tc) Through Hole TO-220

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TK35E08N1,S1X - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK35E08N1

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.2mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

4V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 40V

FET Feature

Power Dissipation (Max)

72W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

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