TK31E60W,S1VX

Part NumberTK31E60W,S1VX

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 600V 30.8A TO-220

DatasheetTK31E60W

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-220

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TK31E60W,S1VX - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK31E60W

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

88mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id

3.7V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

230W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

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