TK2Q60D(Q)

Part NumberTK2Q60D(Q)

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 600V 2A PW-MOLD

DatasheetTK2Q60D

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 2A (Ta) 60W (Tc) Through Hole PW-MOLD2

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TK2Q60D(Q) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK2Q60D

Standard Package

200

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

Packaging

Bulk

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PW-MOLD2

Package / Case

TO-251-3 Stub Leads, IPak

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