TK18E10K3,S1X(S

Part NumberTK18E10K3,S1X(S

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 100V 18A TO-220AB

DatasheetMosfets Prod Guide

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 18A (Ta) Through Hole TO-220-3

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TK18E10K3,S1X(S - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Mosfets Prod Guide

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Rds On (Max) @ Id, Vgs

42mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

FET Feature

Power Dissipation (Max)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case