TK17E65W,S1X

Part NumberTK17E65W,S1X

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 650V 17.3A TO-220AB

DatasheetTK17E65W

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 17.3A (Ta) 165W (Tc) Through Hole TO-220

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TK17E65W,S1X - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK17E65W

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

17.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 8.7A, 10V

Vgs(th) (Max) @ Id

3.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 300V

FET Feature

Power Dissipation (Max)

165W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

All categories