TK16G60W,RVQ

Part NumberTK16G60W,RVQ

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 600V 15.8A D2PAK

DatasheetTK16G60W

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 15.8A (Ta) 130W (Tc) Surface Mount D2PAK

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TK16G60W,RVQ - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK16G60W

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id

3.7V @ 790µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

130W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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