TK10V60W,LVQ

Part NumberTK10V60W,LVQ

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 600V 9.7A 5DFN

DatasheetTK10V60W

Package / Case4-VSFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 9.7A (Ta) 88.3W (Tc) Surface Mount 4-DFN-EP (8x8)

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TK10V60W,LVQ - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK10V60W

Standard Package

2500

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

3.7V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

88.3W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-DFN-EP (8x8)

Package / Case

4-VSFN Exposed Pad

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