TK100E06N1,S1X
TK100E06N1,S1X
Part Number TK100E06N1,S1X
Description MOSFET N CH 60V 100A TO-220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 100A (Ta) 255W (Tc) Through Hole TO-220
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TK100E06N1,S1X - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK100E06N1
Standard Package 50
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 30V
FET Feature -
Power Dissipation (Max) 255W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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