TJ8S06M3L(T6L1,NQ)

Part NumberTJ8S06M3L(T6L1,NQ)

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 60V 8A DPAK-3

DatasheetTJ8S06M3L

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 8A (Ta) 27W (Tc) Surface Mount DPAK+

To learn about the specification of TJ8S06M3L(T6L1,NQ), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TJ8S06M3L(T6L1,NQ) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TJ8S06M3L(T6L1,NQ).
We are offering TJ8S06M3L(T6L1,NQ) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TJ8S06M3L(T6L1,NQ) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TJ8S06M3L

Standard Package

2000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

104mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

+10V, -20V

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 10V

FET Feature

Power Dissipation (Max)

27W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

All categories