TCS1200


TCS1200

Part NumberTCS1200

Manufacturer

Description

Datasheet

Package / Case55TU-1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TCS1200 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition1.03GHz
Noise Figure (dB Typ @ f)-
Gain10.2dBd
Power - Max2095W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A, 5V
Current - Collector (Ic) (Max)60A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case55TU-1
Supplier Device Package55TU-1

TCS1200 - Tags

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