SUP85N03-3M6P-GE3

Part NumberSUP85N03-3M6P-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 85A TO220AB

DatasheetSUP85N03-3M6P

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 85A (Tc) 3.1W (Ta), 78.1W (Tc) Through Hole TO-220AB

To learn about the specification of SUP85N03-3M6P-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SUP85N03-3M6P-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SUP85N03-3M6P-GE3.
We are offering SUP85N03-3M6P-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SUP85N03-3M6P-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SUP85N03-3M6P

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.6mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3535pF @ 15V

FET Feature

Power Dissipation (Max)

3.1W (Ta), 78.1W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

All categories