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STY100NM60N

STY100NM60N

Part NumberSTY100NM60N

ManufacturerSTMicroelectronics

DescriptionMOSFET N CH 600V 98A MAX247

DatasheetSTY100NM60N

Package / CaseTO-247-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 98A (Tc) 625W (Tc) Through Hole MAX247™

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STY100NM60N - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STY100NM60N
Standard Package	30
Manufacturer	STMicroelectronics
Series	MDmesh™ II
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	29mOhm @ 49A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	330nC @ 10V
Vgs (Max)	25V
Input Capacitance (Ciss) (Max) @ Vds	9600pF @ 50V
FET Feature	-
Power Dissipation (Max)	625W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	MAX247™
Package / Case	TO-247-3

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