STW56N65M2-4

Part NumberSTW56N65M2-4

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 650V I2PAKFP

DatasheetSTW56N65M2-4

Package / CaseTO-247-4

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247-4L

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STW56N65M2-4 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STW56N65M2-4

Standard Package

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

62mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 100V

FET Feature

Power Dissipation (Max)

358W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4

All categories

STW56N65M2-4

Part NumberSTW56N65M2-4

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 650V I2PAKFP

DatasheetSTW56N65M2-4

Package / CaseTO-247-4

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247-4L

STW56N65M2-4 - Product Attributes

STW56N65M2-4 - Tags