STW19NM60N

Part NumberSTW19NM60N

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 13A TO-247

DatasheetSTW19NM60N

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247

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STW19NM60N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STW19NM60N

Standard Package

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, MDmesh™ II

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

285mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 50V

FET Feature

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

All categories

STW19NM60N

Part NumberSTW19NM60N

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 13A TO-247

DatasheetSTW19NM60N

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247

STW19NM60N - Product Attributes

STW19NM60N - Tags