STW11NB80

Part NumberSTW11NB80

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 800V 11A TO-247

DatasheetSTW11NB80

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 11A (Tc) 190W (Tc) Through Hole TO-247-3

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STW11NB80 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STW11NB80

Standard Package

Manufacturer

STMicroelectronics

Series

PowerMESH™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

All categories

STW11NB80

Part NumberSTW11NB80

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 800V 11A TO-247

DatasheetSTW11NB80

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 11A (Tc) 190W (Tc) Through Hole TO-247-3

STW11NB80 - Product Attributes

STW11NB80 - Tags