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STV200N55F3


STV200N55F3

Part NumberSTV200N55F3

Manufacturer

Description

Datasheet

Package / CasePowerSO-10 Exposed Bottom Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

STV200N55F3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerSTMicroelectronics
SeriesSTripFET™
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PowerSO
Package / CasePowerSO-10 Exposed Bottom Pad

STV200N55F3 - Tags

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