STS9P2UH7

Part NumberSTS9P2UH7

ManufacturerSTMicroelectronics

DescriptionMOSFET P-CH 20V 9A 8-SOIC

DatasheetSTS9P2UH7

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 9A (Tc) 2.7W (Tc) Surface Mount 8-SO

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STS9P2UH7 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STS9P2UH7

Standard Package

Manufacturer

STMicroelectronics

Series

STripFET™

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

22.5mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2390pF @ 16V

FET Feature

Power Dissipation (Max)

2.7W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

All categories

STS9P2UH7

Part NumberSTS9P2UH7

ManufacturerSTMicroelectronics

DescriptionMOSFET P-CH 20V 9A 8-SOIC

DatasheetSTS9P2UH7

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 9A (Tc) 2.7W (Tc) Surface Mount 8-SO

STS9P2UH7 - Product Attributes

STS9P2UH7 - Tags