STQ1NK80ZR-AP

Part NumberSTQ1NK80ZR-AP

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 800V 0.3A TO-92

DatasheetSTx1NK80ZR(R-AP,-1)

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3

To learn about the specification of STQ1NK80ZR-AP, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STQ1NK80ZR-AP with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STQ1NK80ZR-AP.
We are offering STQ1NK80ZR-AP for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

STQ1NK80ZR-AP - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STx1NK80ZR(R-AP,-1)

Standard Package

2000

Manufacturer

STMicroelectronics

Series

SuperMESH™

Packaging

Tape & Box (TB)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

300mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

160pF @ 25V

FET Feature

Power Dissipation (Max)

3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

All categories