STP26NM60ND

Part NumberSTP26NM60ND

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 21A TO220

DatasheetSTx26NM60ND

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 21A (Tc) 190W (Tc) Through Hole TO-220

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STP26NM60ND - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STx26NM60ND

Standard Package

Manufacturer

STMicroelectronics

Series

FDmesh™ II

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

175mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54.6nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1817pF @ 100V

FET Feature

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

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