STI34N65M5

Part NumberSTI34N65M5

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 650V 28A I2PAK

DatasheetSTB,I,P,W34N65M5

Package / CaseTO-262-3 Full Pack, I²Pak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 28A (Tc) 190W (Tc) Through Hole I2PAKFP (TO-281)

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STI34N65M5 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STB,I,P,W34N65M5

Standard Package

Manufacturer

STMicroelectronics

Series

MDmesh™ V

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 100V

FET Feature

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak

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