STH110N10F7-6

Part NumberSTH110N10F7-6

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 100V 110A H2PAK-6

DatasheetSTH110N10F7-2,-6

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H2PAK-6

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STH110N10F7-6 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STH110N10F7-2,-6

Standard Package

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VII

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5117pF @ 50V

FET Feature

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2PAK-6

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

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