STGYA120M65DF2
STGYA120M65DF2
Part Number STGYA120M65DF2
Description TRENCH GATE FIELD-STOP IGBT, M S
Package / Case TO-247-3 Exposed Pad
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description IGBT NPT, Trench Field Stop 650V 160A 625W Through Hole MAX247™
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STGYA120M65DF2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet STGYA120M65DF2 Datasheet
Standard Package 600
Manufacturer STMicroelectronics
Series *
Packaging Tube
Part Status Active
IGBT Type NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 160A
Current - Collector Pulsed (Icm) 360A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 120A
Power - Max 625W
Switching Energy 1.8mJ (on), 4.41mJ (off)
Input Type Standard
Gate Charge 420nC
Td (on/off) @ 25°C 66ns/185ns
Test Condition 400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 202ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Exposed Pad
Supplier Device Package MAX247™
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