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STGYA120M65DF2

STGYA120M65DF2

Part NumberSTGYA120M65DF2

ManufacturerSTMicroelectronics

DescriptionTRENCH GATE FIELD-STOP IGBT, M S

DatasheetSTGYA120M65DF2 Datasheet

Package / CaseTO-247-3 Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT, Trench Field Stop 650V 160A 625W Through Hole MAX247™

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STGYA120M65DF2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGYA120M65DF2 Datasheet
Standard Package	600
Manufacturer	STMicroelectronics
Series	*
Packaging	Tube
Part Status	Active
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	160A
Current - Collector Pulsed (Icm)	360A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 120A
Power - Max	625W
Switching Energy	1.8mJ (on), 4.41mJ (off)
Input Type	Standard
Gate Charge	420nC
Td (on/off) @ 25°C	66ns/185ns
Test Condition	400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	202ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Exposed Pad
Supplier Device Package	MAX247™

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STGYA120M65DF2 - Tags

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