STGW80H65DFB-4

Part NumberSTGW80H65DFB-4

ManufacturerSTMicroelectronics

DescriptionIGBT BIPO 650V 80A TO247

DatasheetSTGW80H65DFB-4

Package / CaseTO-247-4

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Trench Field Stop 650V 120A 469W Through Hole TO-247-4L

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STGW80H65DFB-4 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

STGW80H65DFB-4

Standard Package

Manufacturer

STMicroelectronics

Series

Packaging

Tube

Part Status

Active

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 80A

Power - Max

469W

Switching Energy

2.1mJ (on), 1.5mJ (off)

Input Type

Standard

Gate Charge

414nC

Td (on/off) @ 25°C

84ns/280ns

Test Condition

400V, 80A, 10Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

TO-247-4L

All categories

STGW80H65DFB-4

Part NumberSTGW80H65DFB-4

ManufacturerSTMicroelectronics

DescriptionIGBT BIPO 650V 80A TO247

DatasheetSTGW80H65DFB-4

Package / CaseTO-247-4

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Trench Field Stop 650V 120A 469W Through Hole TO-247-4L

STGW80H65DFB-4 - Product Attributes

STGW80H65DFB-4 - Tags