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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB,STD,STF,STP,STU5N52K3
Standard Package 2500
Manufacturer STMicroelectronics
Series SuperMESH3™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 525V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 545pF @ 100V
FET Feature -
Power Dissipation (Max) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIHF18N50D-E3
Vishay Siliconix, N-Channel 500V 18A (Tc) 39W (Tc) Through Hole TO-220 Full Pack,
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SIHH26N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 25A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,
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SIHB065N60E-GE3
Vishay Siliconix, N-Channel 600V 40A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),
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PSMN013-80YS,115
Nexperia USA Inc., N-Channel 80V 60A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,
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SIHP21N60EF-GE3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB,
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SIHG30N60AEL-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Through Hole TO-247AC, EL
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FDN537N
ON Semiconductor, N-Channel 30V 6.5A (Ta), 6.5A (Tc) 1.5W (Ta) Surface Mount SuperSOT-3, PowerTrench®
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SI4874BDY-T1-E3
Vishay Siliconix, N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
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SIHD4N80E-GE3
Vishay Siliconix, N-Channel 800V 4.3A (Tc) 69W (Tc) Surface Mount D-PAK (TO-252AA),
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SIR876ADP-T1-GE3
Vishay Siliconix, N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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BSB165N15NZ3GXUMA1
Infineon Technologies, N-Channel 150V 9A (Ta), 45A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™, OptiMOS™
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SPW24N60C3FKSA1
Infineon Technologies, N-Channel 650V 24.3A (Tc) 240W (Tc) Through Hole PG-TO247-3, CoolMOS™
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