STD11NM65N
STD11NM65N
Part Number STD11NM65N
Description MOSFET N CH 650V 11A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK
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STD11NM65N - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx(x)11NM65N
Standard Package 1
Manufacturer STMicroelectronics
Series MDmesh™ II
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 455mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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