STD11N60M2-EP

Part NumberSTD11N60M2-EP

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STD11N60M2-EP Datasheet
Standard Package	1
Manufacturer	STMicroelectronics
Series	MDmesh™ M2-EP
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	595mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.4nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 100V
FET Feature	-
Power Dissipation (Max)	85W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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