STD10N60DM2
STD10N60DM2
Part Number STD10N60DM2 Description N-CHANNEL 600 V, 0.26 OHM TYP., Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 8A (Tc) 109W (Tc) Surface Mount DPAK
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STD10N60DM2 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STD10N60DM2 Datasheet Standard Package 1 Manufacturer STMicroelectronics Series MDmesh™ DM2 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 529pF @ 100V FET Feature - Power Dissipation (Max) 109W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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