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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB43N65M5
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IXYS, N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
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Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3, TrenchMOS™
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IRFB52N15DPBF
Infineon Technologies, N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB, HEXFET®
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Texas Instruments, N-Channel 40V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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STD16NF06T4
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IXYS, N-Channel 200V 90A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™
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Diodes Incorporated, N-Channel 60V 50A (Tc) 2.1W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101
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FCP067N65S3
ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Through Hole TO-220, SuperFET® III
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FQB6N80TM
ON Semiconductor, N-Channel 800V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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TSM220NB06CR RLG
Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),
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STF6N65M2
STMicroelectronics, N-Channel 650V 4A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™
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