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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ST(B,W)36NM60ND
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, FDmesh™ II
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80.4nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2785pF @ 50V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 30V 14A (Ta), 35A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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Vishay Siliconix, N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®
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