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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ST(B,W)36NM60ND Standard Package 1000 Manufacturer STMicroelectronics Series Automotive, AEC-Q101, FDmesh™ II Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80.4nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2785pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STN3N40K3 STMicroelectronics, N-Channel 400V 1.8A (Tc) 3.3W (Ta) Surface Mount SOT-223, SuperMESH3™
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FQD6N40CTM ON Semiconductor, N-Channel 400V 4.5A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount D-Pak, QFET®
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FCA22N60N ON Semiconductor, N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-3PN, SupreMOS™
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IRFB38N20DPBF Infineon Technologies, N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB, HEXFET®
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IRFS3107TRL7PP Infineon Technologies, N-Channel 75V 240A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
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IRL640A ON Semiconductor, N-Channel 200V 18A (Tc) 110W (Tc) Through Hole TO-220-3,
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SI7108DN-T1-E3 Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IRFB4615PBF Infineon Technologies, N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB, HEXFET®
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STFW3N170 STMicroelectronics, N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole ISOWATT-218FX, PowerMESH™
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DMT6015LPS-13 Diodes Incorporated, N-Channel 60V 10.6A (Ta), 31A (Tc) 1.16W (Ta) Surface Mount PowerDI5060-8,
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IRFBG30PBF Vishay Siliconix, N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB,
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DN2530N8-G Microchip Technology, N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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