STB33N65M2
STB33N65M2
Part Number STB33N65M2
Description MOSFET N-CH 650V 24A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D2PAK
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STB33N65M2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx33N65M2
Standard Package 1000
Manufacturer STMicroelectronics
Series MDmesh™ M2
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41.5nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1790pF @ 100V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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