STB18NM60ND

Part NumberSTB18NM60ND

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 600V 13A D2PAK

DatasheetSTx18NM60ND

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D2PAK

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STB18NM60ND - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

STx18NM60ND

Standard Package

Manufacturer

STMicroelectronics

Series

FDmesh™ II

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 50V

FET Feature

Power Dissipation (Max)

110W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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