SSM6J213FE(TE85L,F
SSM6J213FE(TE85L,F
Part Number SSM6J213FE(TE85L,F Description MOSFET P CH 20V 2.6A ES6 Package / Case SOT-563, SOT-666Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2.6A (Ta) 500mW (Ta) Surface Mount ES6
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SSM6J213FE(TE85L,F - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SSM6J213FE Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 103mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ES6 Package / Case SOT-563, SOT-666
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