Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3J35MFV
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	π-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Rds On (Max) @ Id, Vgs	8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	12.2pF @ 3V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723

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DMP2066LSN-7	Diodes Incorporated, P-Channel 20V 4.6A (Ta) 1.25W (Ta) Surface Mount SC-59-3,	View
IRF5210STRLPBF	Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View
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DMP3098L-7	Diodes Incorporated, P-Channel 30V 3.8A (Ta) 1.08W (Ta) Surface Mount SOT-23-3,	View
AO3407A	Alpha & Omega Semiconductor Inc., P-Channel 30V 4.3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
NTR1P02LT3G	ON Semiconductor, P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),	View

SSM3J35MFV,L3F

Part NumberSSM3J35MFV,L3F