Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3J351R
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	134mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15.1nC @ 10V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads

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SSM3J351R,LF

Part NumberSSM3J351R,LF