SQS966ENW-T1_GE3


SQS966ENW-T1_GE3

Part NumberSQS966ENW-T1_GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8W

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SQS966ENW-T1_GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds572pF @ 25V
Power - Max27.8W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8W
Supplier Device PackagePowerPAK® 1212-8W

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SQS966ENW-T1_GE3 - Tags

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