SQM50N04-4M0L_GE3

Part NumberSQM50N04-4M0L_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHANNEL 40V 50A TO263

DatasheetSQM50N04-4M0L

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 50A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak)

To learn about the specification of SQM50N04-4M0L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQM50N04-4M0L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQM50N04-4M0L_GE3.
We are offering SQM50N04-4M0L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQM50N04-4M0L_GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

SQM50N04-4M0L

Standard Package

800

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6100pF @ 25V

FET Feature

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories