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SQM35N30-97_GE3

SQM35N30-97_GE3

Part NumberSQM35N30-97_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 300V 35A TO263

DatasheetSQM35N30-97

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 35A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

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SQM35N30-97_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQM35N30-97
Standard Package	800
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	97mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5650pF @ 25V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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SQM35N30-97_GE3 - Tags

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