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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120N10-3M8
Standard Package 800
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7230pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
T2N7002AK,LM
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STMicroelectronics, N-Channel 60V 28A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ II
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Toshiba Semiconductor and Storage, N-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247, DTMOSIV
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SI5418DU-T1-GE3
Vishay Siliconix, N-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single, TrenchFET®
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FQB8N60CTM
ON Semiconductor, N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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