Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ480E-T1_GE3

SQJQ480E-T1_GE3

SQJQ480E-T1_GE3

Part NumberSQJQ480E-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 80V POWERPAK 8X8L

DatasheetSQJQ480E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 150A (Tc) 136W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ480E-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ480E-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ480E-T1_GE3.
We are offering SQJQ480E-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ480E-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ480E
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	144nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8625pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SQJQ480E-T1_GE3 - Related Products

	TK14N65W,S1F	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-247, DTMOSIV	View
	IXTP1R6N50D2	IXYS, N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB,	View
	RV2C002UNT2L	Rohm Semiconductor, N-Channel 20V 180mA (Ta) 100mW (Ta) Surface Mount DFN1006-3 (VML1006),	View
	RDR005N25TL	Rohm Semiconductor, N-Channel 250V 500mA (Ta) 540mW (Ta) Surface Mount TSMT3,	View
	FCPF190N65S3R0L	ON Semiconductor, N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-220F-3, SuperFET® III	View
	IPS80R900P7AKMA1	Infineon Technologies, N-Channel 800V 6A (Tc) 45W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	SIS472DN-T1-GE3	Vishay Siliconix, N-Channel 30V 20A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRF3703PBF	Infineon Technologies, N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	IRFZ44NSTRLPBF	Infineon Technologies, N-Channel 55V 49A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK, HEXFET®	View
	BSC097N06NSATMA1	Infineon Technologies, N-Channel 60V 46A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	FDMS86368-F085	ON Semiconductor, N-Channel 80V 80A (Tc) 214W (Tc) Surface Mount Power56, Automotive, AEC-Q101, PowerTrench®	View
	IRFP3077PBF	Infineon Technologies, N-Channel 75V 120A (Tc) 340W (Tc) Through Hole TO-247AC, HEXFET®	View

SQJQ480E-T1_GE3 - Tags

SQJQ480E-T1_GE3 SQJQ480E-T1_GE3 PDF SQJQ480E-T1_GE3 datasheet SQJQ480E-T1_GE3 specification SQJQ480E-T1_GE3 image SQJQ480E-T1_GE3 India Renesas Electronics India SQJQ480E-T1_GE3 buy SQJQ480E-T1_GE3 SQJQ480E-T1_GE3 price SQJQ480E-T1_GE3 distributor SQJQ480E-T1_GE3 supplier SQJQ480E-T1_GE3 wholesales