Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ872EP-T1_GE3

SQJ872EP-T1_GE3

SQJ872EP-T1_GE3

Part NumberSQJ872EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 150V

DatasheetSQJ872EP

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ872EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ872EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ872EP-T1_GE3.
We are offering SQJ872EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ872EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ872EP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	24.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	35.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1045pF @ 25V
FET Feature	-
Power Dissipation (Max)	55W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	8-PowerTDFN

SQJ872EP-T1_GE3 - Related Products

	IXFK140N30P	IXYS, N-Channel 300V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, PolarP2™	View
	ZDX080N50	Rohm Semiconductor, N-Channel 500V 8A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	IXFH94N30P3	IXYS, N-Channel 300V 94A (Tc) 1040W (Tc) Through Hole TO-247, HiPerFET™, Polar3™	View
	SIS468DN-T1-GE3	Vishay Siliconix, N-Channel 80V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BUK7Y102-100B,115	Nexperia USA Inc., N-Channel 100V 15A (Tc) 60W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	SIRC18DP-T1-GE3	Vishay Siliconix, N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SN7002NH6327XTSA2	Infineon Technologies, N-Channel 60V 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, Automotive, AEC-Q101, SIPMOS®	View
	SI1062X-T1-GE3	Vishay Siliconix, N-Channel 20V 220mW (Ta) Surface Mount SC-89-3, TrenchFET®	View
	SI7308DN-T1-E3	Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RFD14N05SM9A	ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-252AA,	View
	STF28N60M2	STMicroelectronics, N-Channel 600V 24A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ II Plus	View
	IRF8301MTRPBF	Infineon Technologies, N-Channel 30V 34A (Ta), 192A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT, HEXFET®	View

SQJ872EP-T1_GE3 - Tags

SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 PDF SQJ872EP-T1_GE3 datasheet SQJ872EP-T1_GE3 specification SQJ872EP-T1_GE3 image SQJ872EP-T1_GE3 India Renesas Electronics India SQJ872EP-T1_GE3 buy SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 price SQJ872EP-T1_GE3 distributor SQJ872EP-T1_GE3 supplier SQJ872EP-T1_GE3 wholesales