SQJ570EP-T1_GE3


SQJ570EP-T1_GE3

Part NumberSQJ570EP-T1_GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SQJ570EP-T1_GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C15A (Tc), 9.5A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V, 600pF @ 25V
Power - Max27W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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