Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ414EP-T1_GE3

SQJ414EP-T1_GE3

SQJ414EP-T1_GE3

Part NumberSQJ414EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 30A POWERPAKSOL

DatasheetSQJ414EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ414EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ414EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ414EP-T1_GE3.
We are offering SQJ414EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ414EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ414EP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 15V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ414EP-T1_GE3 - Related Products

	FQD12N20LTM	ON Semiconductor, N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak, QFET®	View
	BST82,215	Nexperia USA Inc., N-Channel 100V 190mA (Ta) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™	View
	IXFN82N60Q3	IXYS, N-Channel 600V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	NTTFS4C06NTWG	ON Semiconductor, N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	MVGSF1N02LT1G	ON Semiconductor, N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	STV270N4F3	STMicroelectronics, N-Channel 40V 270A (Tc) 300W (Tc) Surface Mount 10-PowerSO, STripFET™ III	View
	PMZB290UN,315	Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	FDBL0110N60	ON Semiconductor, N-Channel 60V 300A (Tc) 429W (Tj) Surface Mount 8-HPSOF, PowerTrench®	View
	SIE882DF-T1-GE3	Vishay Siliconix, N-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®	View
	STF19NM50N	STMicroelectronics, N-Channel 500V 14A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ II	View
	FQP44N10	ON Semiconductor, N-Channel 100V 43.5A (Tc) 146W (Tc) Through Hole TO-220-3, QFET®	View
	PSMN7R0-30YLC,115	Nexperia USA Inc., N-Channel 30V 61A (Tc) 48W (Tc) Surface Mount LFPAK56, Power-SO8,	View

SQJ414EP-T1_GE3 - Tags

SQJ414EP-T1_GE3 SQJ414EP-T1_GE3 PDF SQJ414EP-T1_GE3 datasheet SQJ414EP-T1_GE3 specification SQJ414EP-T1_GE3 image SQJ414EP-T1_GE3 India Renesas Electronics India SQJ414EP-T1_GE3 buy SQJ414EP-T1_GE3 SQJ414EP-T1_GE3 price SQJ414EP-T1_GE3 distributor SQJ414EP-T1_GE3 supplier SQJ414EP-T1_GE3 wholesales