SQD19P06-60L_T4GE3
SQD19P06-60L_T4GE3
Part Number SQD19P06-60L_T4GE3 Description MOSFET P-CH 60V 20A TO252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA
To learn about the specification of SQD19P06-60L_T4GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD19P06-60L_T4GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD19P06-60L_T4GE3.
We are offering SQD19P06-60L_T4GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQD19P06-60L_T4GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD19P06-60L Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 55mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V FET Feature - Power Dissipation (Max) 46W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQD19P06-60L_T4GE3 - Related ProductsMore >>
CWDM3011P TR13 Central Semiconductor Corp, P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,
View
RZF020P01TL Rohm Semiconductor, P-Channel 12V 2A (Ta) 800mW (Ta) Surface Mount TUMT3,
View
IRLML2246TRPBF Infineon Technologies, P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SI7119DN-T1-E3 Vishay Siliconix, P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FDFM2P110 ON Semiconductor, P-Channel 20V 3.5A (Ta) 2W (Ta) Surface Mount MicroFET 3x3mm, PowerTrench®
View
NTHD4P02FT1G ON Semiconductor, P-Channel 20V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™,
View
SI4425DDY-T1-GE3 Vishay Siliconix, P-Channel 30V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
View
SIS413DN-T1-GE3 Vishay Siliconix, P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
CSD25304W1015T Texas Instruments, P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™
View
NDS332P ON Semiconductor, P-Channel 20V 1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
View
CEDM8004VL TR Central Semiconductor Corp, P-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,
View
SSM3J133TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
SQD19P06-60L_T4GE3 - Tags
English
